2SA1360 GP BJT

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  • 3954 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 150V 0.05A 3-Pin TO-126IS

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 150 V
Maximum Collector Emitter Saturation Voltage 1@1mA@10mA V
Maximum Collector Emitter Voltage 150 V
Maximum DC Collector Current 0.05 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1200 mW
Maximum Transition Frequency 200(Typ) MHz
Type PNP