2SA1386 GP BJT

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  • 2365 NEW JERSEY SEMICONDUCTOR
  • 87 SANKEN

Trans GP BJT PNP 160V 20A 3-Pin(3+Tab) TO-247

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 160 V
Maximum Collector Emitter Saturation Voltage 2@500mA@5A V
Maximum Collector Emitter Voltage 160 V
Maximum DC Collector Current 20 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 130000 mW
Maximum Transition Frequency 10(Min) MHz
Type PNP