2SA1444 GP BJT

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  • 2417 NEW JERSEY SEMICONDUCTOR
  • 61 NIPPON SEMI

Trans GP BJT PNP 160V 1.5A 4-Pin(3+Tab) PCP

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 180 V
Maximum Collector Emitter Saturation Voltage 0.5@50mA@500mA V
Maximum Collector Emitter Voltage 160 V
Maximum DC Collector Current 1.5 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 500 mW
Maximum Transition Frequency 120(Typ) MHz
Type PNP