2SA1606 GP BJT
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- 3526 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 180 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5(Typ)@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 160 | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 15000 | mW |
| Maximum Transition Frequency | 100(Typ) | MHz |
| Type | PNP |