2SA2060 GP BJT
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- 4 NEW JERSEY SEMICONDUCTOR
Trans GP BJT PNP 50V 2A 4-Pin(3+Tab) PW-Mini
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single Dual Collector | |
| Material | Si | |
| Maximum Collector Base Voltage | 50 | V |
| Maximum Collector Emitter Saturation Voltage | 0.2@0.033A@1A | V |
| Maximum Collector Emitter Voltage | 50 | V |
| Maximum DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | PNP |