2SA2151A RF BJT
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- 8520 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Collector Base Voltage | 230 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@0.5A@5A | V |
| Maximum Collector Emitter Voltage | 230 | V |
| Maximum DC Collector Current | 15 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Transition Frequency | 20(Typ) | MHz |
| Minimum DC Current Gain | 50@3A@4V | |
| Number of Elements per Chip | 1 | |
| Type | PNP |