2SA671 GP BJT
Datasheet: View
Stock
- 54 HITACHI
- 200 MOSPEC
- 874 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 50 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@15mA@150mA | V |
| Maximum Collector Emitter Voltage | 50 | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Emitter Base Voltage | 4 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 400 | mW |
| Type | PNP |