2SA673A GP BJT

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  • 320 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 50V 0.5A 3-Pin TO-92

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Saturation Voltage 0.6@15mA@150mA V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 400 mW
Type PNP