2SA743 GP BJT

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  • 5 HITACHI
  • 2742 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 50V 1A 3-Pin TO-126 Mod

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Saturation Voltage 1.5@0.1A@1A V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 750 mW
Maximum Transition Frequency 120(Typ) MHz
Type PNP