2SA756 GP BJT

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  • 1000 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 100V 0.5A 3-Pin TO-126B-A1

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Features Values Unit
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 0.4@50mA@500mA V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 0.5 A
Type PNP