2SA771 GP BJT

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  • 1981 NEW JERSEY SEMICONDUCTOR
  • 31 SANKEN
  • 4 WORLD WIDE

Trans GP BJT PNP 80V 0.5A 3-Pin TO-92L-A1

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.4@50mA@500mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1000 mW
Maximum Transition Frequency 120(Typ) MHz
Type PNP