2SA817 GP BJT
Datasheet: View
Stock
- 788 NEW JERSEY SEMICONDUCTOR
- 72 TOSHIBA
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 0.4@20mA@200mA | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 0.3 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 600 | mW |
| Maximum Transition Frequency | 100(Typ) | MHz |
| Type | PNP |