2SA877 GP BJT

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  • 1000 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 200V 0.07A 3-Pin TO-92L-A1

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1.5@5mA@50mA V
Maximum Collector Emitter Voltage 200 V
Maximum DC Collector Current 0.07 A
Type PNP