2SA907 GP BJT

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  • 1980 NEW JERSEY SEMICONDUCTOR
  • 40 SANKEN

Trans GP BJT PNP 18V 1A 3-Pin TO-126B-A1

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 20 V
Maximum Collector Emitter Saturation Voltage 0.5@50mA@1A V
Maximum Collector Emitter Voltage 18 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1200 mW
Maximum Transition Frequency 200(Typ) MHz
Type PNP