2SA954 GP BJT

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  • 789 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 80V 0.3A 3-Pin TO-92

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.6@30mA@300mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 0.3 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 600 mW
Maximum Transition Frequency 100(Typ) MHz
Type PNP