2SA957 GP BJT

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  • 933 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 30V 0.8A Ammo

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 35 V
Maximum Collector Emitter Saturation Voltage 0.7@20mA@500mA V
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 0.8 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 600 mW
Maximum Transition Frequency 120(Typ) MHz
Type PNP