2SB1017 GP BJT
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- 1000 NEW JERSEY SEMICONDUCTOR
- 10 TOSHIBA
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 1.7@0.3A@3A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 4 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 2000 | mW |
| Maximum Transition Frequency | 9(Typ) | MHz |
| Type | PNP |