2SB1018A GP BJT

default part image

Datasheet: View

Stock

  • 2896 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 7A 3-Pin(3+Tab) TO-220NIS

Request For Quote Datasheet
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 0.5@0.4A@4A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 2000 mW
Maximum Transition Frequency 10(Typ) MHz
Type NPN