2SB1068 GP BJT

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  • 1000 NEW JERSEY SEMICONDUCTOR
  • 3792 NIPPON SEMI

Trans GP BJT PNP 16V 2A 3-Pin TO-92

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 20 V
Maximum Collector Emitter Saturation Voltage 0.4@10mA@1A 0.5@75mA@1.5A
Maximum Collector Emitter Voltage 16 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 750 mW
Maximum Transition Frequency 180(Typ) MHz
Type PNP