2SB1097 GP BJT

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  • 2385 NEW JERSEY SEMICONDUCTOR
  • 100 NIPPON SEMI

Trans GP BJT PNP 60V 7A 3-Pin(3+Tab) TO-220 Isolated

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 90 V
Maximum Collector Emitter Saturation Voltage 0.5@0.5A@5A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 30000 mW
Type PNP