2SB1231 GP BJT
Datasheet: View
Stock
- 1968 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 110 | V |
| Maximum Collector Emitter Saturation Voltage | 0.8@1A@10A | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 25 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 3000 | mW |
| Type | PNP |