2SB1284 Darlington BJT
Datasheet: View
Stock
- 1100 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2@10mA@5A | V |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum Continuous DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 1500@5A@3V | |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | PNP | |
| Typical Current Gain Bandwidth | 20 | MHz |