2SB1381 Darlington BJT
Datasheet: View
Stock
- 1000 NEW JERSEY SEMICONDUCTOR
Trans Darlington PNP 100V 5A 3-Pin(3+Tab) TO-220NIS
Request For Quote| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2.5@5mA@2.5A | V |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum Continuous DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 500@7A@3V | 1500@2.5A@3V |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | PNP |