2SB1481 Darlington BJT
Datasheet: View
Stock
- 450 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2@6mA@3A | V |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum Continuous DC Collector Current | 4 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Minimum DC Current Gain | 1000@3A@2V|2000@1.5A@2V | |
| Number of Elements per Chip | 1 | |
| Type | PNP |