2SB1495 Darlington BJT
Datasheet: View
Stock
- 8541 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2@1.5mA@1.5A | V |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum Continuous DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 150 | ﾡC |
| Minimum DC Current Gain | 2000@1A@2V | 2000@2A@2V |
| Minimum Operating Temperature | -55 | ﾡC |
| Number of Elements per Chip | 1 | |
| Type | PNP |