2SB1569 GP BJT

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  • 6578 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 60V 2A 4-Pin(3+Tab) MPT

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Features Values Unit
Category Bipolar Power
Configuration Single Dual Collector
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.35@50mA@1A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 2000 mW
Maximum Transition Frequency 200(Typ) MHz
Type PNP