2SB564 GP BJT
Datasheet: View
Stock
- 880 NEW JERSEY SEMICONDUCTOR
- 399 NIPPON SEMI
- 66 RF POWER
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 30 | V |
| Maximum Collector Emitter Saturation Voltage | 0.35@0.1A@1A | V |
| Maximum Collector Emitter Voltage | 25 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Maximum Transition Frequency | 110(Typ) | MHz |
| Type | PNP |