2SB595 GP BJT
Datasheet: View
Stock
- 1949 NEW JERSEY SEMICONDUCTOR
- 2 TRANSITRON
- 3 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 2@0.4A@4A | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 40000 | mW |
| Maximum Transition Frequency | 5(Typ) | MHz |
| Type | PNP |