2SB601 Darlington BJT
Datasheet: View
Stock
- 1305 NATIONAL SEMICONDUCTOR
- 1001 NEW JERSEY SEMICONDUCTOR
- 952 NIPPON SEMI
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2@5mA@2A | V |
| Maximum Collector Base Voltage | 500 | V |
| Maximum Collector Emitter Voltage | 300 | V |
| Maximum Continuous DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 10 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 100@3A@2V | |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |