2SB605 GP BJT
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- 998 NEW JERSEY SEMICONDUCTOR
- 2630 NIPPON SEMI
Trans GP BJT PNP 50V 0.7A 3-Pin SP-8
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.36@0.05A@0.5A | V |
| Maximum Collector Emitter Voltage | 50 | V |
| Maximum DC Collector Current | 0.7 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Maximum Transition Frequency | 120(Typ) | MHz |
| Type | PNP |