2SB621 GP BJT

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  • 790 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 25V 1A 3-Pin TO-92-B1

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 30 V
Maximum Collector Emitter Saturation Voltage 0.4@50mA@500mA V
Maximum Collector Emitter Voltage 25 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 750 mW
Maximum Transition Frequency 200(Typ) MHz
Type PNP