2SB698 GP BJT

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  • 80 MITSIBISHI
  • 1000 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 20V 0.7A 3-Pin NP

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 25 V
Maximum Collector Emitter Saturation Voltage 0.45@50mA@500mA 0.3@50mA@500mA
Maximum Collector Emitter Voltage 20 V
Maximum DC Collector Current 0.7 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 600 mW
Maximum Transition Frequency 250(Typ) MHz
Type PNP