2SB753 GP BJT

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  • 3887 NEW JERSEY SEMICONDUCTOR
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Trans GP BJT PNP 80V 7A 3-Pin(3+Tab) TO-220AB

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 0.5@0.4A@4A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1500 mW
Maximum Transition Frequency 10(Typ) MHz
Type PNP