2SB757 GP BJT

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  • 5263 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 50V 7A 3-Pin(3+Tab) 2-16B1A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Saturation Voltage 0.4@0.4A@4A V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 2500 mW
Maximum Transition Frequency 10(Typ) MHz
Type PNP