2SB772 GP BJT
Datasheet: View
Stock
- 3819 NEW JERSEY SEMICONDUCTOR
- 17 NIPPON SEMI
- 1 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.4@50mA@1A | 0.7@100mA@2A |
| Maximum Collector Emitter Voltage | 30 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 12500 | mW |
| Maximum Transition Frequency | 100(Typ) | MHz |
| Type | PNP |