2SB774 GP BJT
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- 40 MATASHITA
- 1000 NEW JERSEY SEMICONDUCTOR
Trans GP BJT PNP 25V 0.1A 3-Pin TO-92-B1
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 30 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@10mA@100mA | V |
| Maximum Collector Emitter Voltage | 25 | V |
| Maximum DC Collector Current | 0.1 | A |
| Maximum Emitter Base Voltage | 15 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 400 | mW |
| Maximum Transition Frequency | 150(Typ) | MHz |
| Type | PNP |