2SB795 Darlington BJT
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- 125 NEW JERSEY SEMICONDUCTOR
- 108 NIPPON SEMI
Trans Darlington PNP 80V 1.5A 3-Pin TO-126
Request For Quote| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2@1mA@1A | V |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum Continuous DC Collector Current | 1.5 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 1000@0.5A@2V | |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | PNP |