2SB810 GP BJT
Datasheet: View
Stock
- 1000 NEW JERSEY SEMICONDUCTOR
- 16470 NIPPON SEMI
Trans GP BJT PNP 25V 0.7A 3-Pin
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 30 | V |
| Maximum Collector Emitter Saturation Voltage | 0.4@70mA@700mA | V |
| Maximum Collector Emitter Voltage | 25 | V |
| Maximum DC Collector Current | 0.7 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 350 | mW |
| Maximum Transition Frequency | 160(Typ) | MHz |
| Type | PNP |