2SB817 GP BJT

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  • 3239 NEW JERSEY SEMICONDUCTOR
  • 401 SANYO

Trans GP BJT PNP 140V 12A 3-Pin(3+Tab) TO-3PB

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 160 V
Maximum Collector Emitter Saturation Voltage 2.5@0.5A@5A V
Maximum Collector Emitter Voltage 140 V
Maximum DC Collector Current 12 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 100 mW
Maximum Transition Frequency 15(Typ) MHz
Type PNP