2SB824 GP BJT

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  • 1001 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 50V 5A 3-Pin(3+Tab) TO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.4@0.3A@3A V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1750 mW
Maximum Transition Frequency 30(Typ) MHz
Type PNP