2SB860 GP BJT

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  • 1000 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 100V 4A 3-Pin(3+Tab) TO-220AB

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 1@0.1A@1A V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1800 mW
Type PNP