2SB881 GP BJT
Datasheet: View
Stock
- 1000 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 70 | V |
| Maximum Collector Emitter Saturation Voltage | 1.5@7mA@3.5A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 7 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1750 | mW |
| Maximum Transition Frequency | 20(Typ) | MHz |
| Type | PNP |