2SC1162 GP BJT
Datasheet: View
Stock
- 1575 HITACHI
- 1022 NEW JERSEY SEMICONDUCTOR
- 11 SOLID STATE SYSTEMS
- 51 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 35 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.2A@2A | V |
| Maximum Collector Emitter Voltage | 35 | V |
| Maximum DC Collector Current | 2.5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 750 | mW |
| Maximum Transition Frequency | 180(Typ) | MHz |
| Type | NPN |