2SC1173 GP BJT

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  • 3620 NEW JERSEY SEMICONDUCTOR
  • 603 TOSHIBA
  • 13 WORLD WIDE

Trans GP BJT NPN 30V 3A 3-Pin(3+Tab) TO-220AB

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 30 V
Maximum Collector Emitter Saturation Voltage 0.8@0.2A@2A V
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 10000 mW
Maximum Transition Frequency 100(Typ) MHz
Type NPN