2SC1213 GP BJT

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  • 1294 HITACHI
  • 615 NEW JERSEY SEMICONDUCTOR
  • 2 NIPPON SEMI
  • 4 WORLD WIDE

Trans GP BJT NPN 35V 0.5A 3-Pin TO-92

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 35 V
Maximum Collector Emitter Saturation Voltage 0.6@15mA@150mA V
Maximum Collector Emitter Voltage 35 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 400 mW
Type NPN