2SC1505 GP BJT

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  • 1895 NEW JERSEY SEMICONDUCTOR
  • 11 NIPPON SEMI
  • 6 SOLID STATE SYSTEMS

Trans GP BJT NPN 300V 0.2A 3-Pin(3+Tab) TO-220AB

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 300 V
Maximum Collector Emitter Saturation Voltage 2@5mA@50mA V
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 0.2 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1200 mW
Maximum Transition Frequency 80(Typ) MHz
Type NPN