2SC1505 GP BJT
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- 1895 NEW JERSEY SEMICONDUCTOR
- 11 NIPPON SEMI
- 6 SOLID STATE SYSTEMS
Trans GP BJT NPN 300V 0.2A 3-Pin(3+Tab) TO-220AB
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 300 | V |
| Maximum Collector Emitter Saturation Voltage | 2@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 300 | V |
| Maximum DC Collector Current | 0.2 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1200 | mW |
| Maximum Transition Frequency | 80(Typ) | MHz |
| Type | NPN |