2SC1573 GP BJT
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- 240 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 200V 0.07A 3-Pin TO-92L-A1
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 250 | V |
| Maximum Collector Emitter Saturation Voltage | 1.2@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 200 | V |
| Maximum DC Collector Current | 0.07 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Maximum Transition Frequency | 80(Typ) | MHz |
| Type | NPN |