2SC1740 GP BJT

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  • 1000 NEW JERSEY SEMICONDUCTOR
  • 1 ROHM

Trans GP BJT NPN 40V 0.1A 3-Pin SPT

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Saturation Voltage 0.4@5mA@50mA V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 300 mW
Maximum Transition Frequency 180(Typ) MHz
Type NPN