2SC1741 GP BJT

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  • 1000 NEW JERSEY SEMICONDUCTOR
  • 990 ROHM
  • 9 WORLD WIDE

Trans GP BJT NPN 32V 0.5A 3-Pin TO-92

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 0.6@50mA@500mA V
Maximum Collector Emitter Voltage 32 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 400 mW
Maximum Transition Frequency 250(Typ) MHz
Type NPN