2SC1842 GP BJT

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  • 1000 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 35V 0.1A 3-Pin TO-92

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Features Values Unit
Maximum Collector Emitter Voltage 35 V
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 0.3@10mA@100mA V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 125 °C
Maximum Power Dissipation 250 mW
Maximum Transition Frequency 250(Typ) MHz
Type NPN